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LSAT
LSAT （ La,Sr ）(Al,Ta)03 is grown by Czockralski method ，it has lower melting point. LSAT has excellent lattice match with high Tc superconductors and many oxide materials. LSAT has less structure defect, twin-free. It also has low dielectric loss in microwave band. it is used for epitaxial oxide thin films for gain magnetic ferro-electronic and superconductive devices.
Physical Property |
molecular formula |
(LaAlO3)0.3 (Sr2AlTaO6)0.7 |
Crystal Structure |
Cubic ：a=3.868Å |
Melt Point |
1840oC |
Density |
6.74g/cm3 |
Hardness |
6.5Mohs |
Growth Method |
Czochralski |
Thermal expansion |
10 × 10-6/K |
Dielectric Constant |
~22 |
Standard Size |
Dia.2＂×0.5mm
20×20×0.5mm
10×10×0.5mm
Special size and orientation are available upon request
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Orientation Accuracy |
±0.3o |
Polishing Micro Roughness
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Single or double sides polished Ra<5Å |
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