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LaAlO3
LaAlO3 single crystal has a good lattice constant ( a=3.792Å) which matches to high Tc superconductive material, such as YbaCuO (a=3.86Å). It also has proper dielectric constant and low dielectric loss in microwave band properties. It is an excellent substrate for epitaxial growth of high Tc superconductors, magnetic and ferro-electric thin films.
Typical Physical Properties |
Molecular Formula |
LaAlO3 |
Orientation |
（100）、110）、111） |
Crystal Structure |
Rhombohedral a=3.792Å |
Growth Method |
Czochralski |
Density |
6.52g/cm3 |
Melt Point |
2080oC |
Thermal Expansion |
10×10-6/℃ |
Dielectric Constant |
25 |
Hardness |
6.5Mohs |
Standard Size |
Dia.3＂×0.5mm
Dia.2＂×0.5mm
20×20×0.5mm
10×10×0.5mm
Special size and orientation are available upon request.
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Orientation |
<100> <110> <111> |
Orientation Accuracy |
±0.3o |
Polishing & Micro Roughness
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Single or double sides polished Ra<5Å |
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